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| STTH20003TV Ultrafast high voltage rectifier Mian product characteristics IF(AV) VRRM Tj (max) VF (typ) trr (max) up to 2 x 100 A 300 V 150 C 0.95 V 90 ns A1 A2 K1 K2 K1 A1 K2 A2 ISOTOP STTH20003TV Features and benefits Combines highest recovery and reverse voltage performance Ultrafast, soft and noise-free recovery Package insulation voltage 2500 Vrms low inductance and low capacitance allow simpler layout Description Dual rectifiers suited for Switch Mode Power Supply and high frequency DC to DC converters. Packaged in ISOTOPTM, this device is intended for use in low voltage, high frequency inverters, free wheeling operation, welding equipment and telecom power supplies. Table 1. Symbol VRRM IF(RMS) IF(AV) IFSM Tstg Tj Repetitive peak reverse voltage RMS forward current Average forward current Surge non repetitive forward current Storage temperature range Maximum operating junction temperature Tc = 85 C = 0.5 tp = 10 ms sinusoidal Per diode Per device Order codes Part number STTH20003TV Marking STTH20003TV Absolute ratings (limiting values, per diode, Tc = 25 C unless otherwise stated) Parameter Value 300 180 100 A 200 100 -55 to + 150 150 A C C Unit V A TM: ISOTOP is a registered trademark of STMicroelectronics September 2006 Rev 2 1/7 www.st.com 7 Characteristics STTH20003TV 1 Characteristics Table 2. Symbol Rth(j-c) Rth(c) Junction to case Total Coupling 0.35 0.1 C/W Thermal resistance Parameter Per diode Value (max). 0.55 Unit When diodes 1 and 2 are used simultaneously: Tj(diode 1) = P(diode 1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c) Table 3. Symbol IR(1) VF(2) Static electrical characteristics (per diode) Parameter Reverse leakage current Forward voltage drop Test conditions Tj = 25 C Tj = 125 C Tj = 25 C Tj = 150 C VR = 300 V Min. Typ Max. 200 0.2 2 1.20 IF = 100 A V 0.8 0.95 Unit A mA 1. Pulse test: tp = 5 ms, < 2% 2. Pulse test: tp = 380 s, < 2% To evaluate the conduction losses use the following equation: P = 0.75 x IF(AV) + 0.0020 IF2(RMS) Table 4. Symbol Dynamic characteristics (per diode) Parameter Reverse recovery time Reverse recovery current Softness factor Forward recovery time Forward recovery voltage Test conditions IF = 0.5 A Irr = 0.25 A IR = 1 A Tj = 25 C IF = 1 A dIF/dt = -50 A/s VR = 30 V VR = 200 V IF = 100 A dIF/dt = -200 A/s IF = 100 A VR = 200 V dIF/dt = -200 A/s dIF/dt = 200 A/s IF = 100 A VFR = 1.1 x VFmax IF = 100 A dIF/dt = 200 A/s VFR = 1.1 x VFmax 0.3 1400 5 ns V Min Typ Max Unit 55 ns 90 18 A trr IRM Sfactor tfr VFP Tj = 125 C Tj = 125 C Tj = 25 C Tj = 25 C 2/7 STTH20003TV Characteristics Figure 1. Conduction losses versus Figure 2. average forward current (per diode) 500 =1 Forward voltage drop versus forward current (per diode) P1(W) 120 100 80 60 40 20 IF(av) (A) 0 0 20 40 60 80 =tp/T tp IFM(A) Tj=125C (Typical values) = 0.2 = 0.1 = 0.05 = 0.5 100 Tj=25C Tj=125C 10 T 100 120 1 0.0 VFM(V) 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 Figure 3. Relative variation of thermal Figure 4. impedance junction to case versus pulse duration 40 35 30 25 20 15 T Peak reverse recovery current versus dIF/dt (90% confidence, per diode) 1.0 0.8 0.6 0.4 0.2 Zth(j-c)/Rth(j-c) IRM(A) VR=200V Tj=125C IF=IF(av) IF=0.5xIF(av) IF=2xIF(av) 10 Single pulse tp(s) 1E-2 1E-1 =tp/T tp 5 0 0 50 0.0 1E-3 dIF/dt(A/s) 100 150 200 250 300 350 400 450 500 1E+0 5E+0 Figure 5. Reverse recovery time versus dIF/dt (90% confidence, per diode) Figure 6. Softness factor (tb/ta) versus dIF/dt (typical values, per diode) 260 240 220 200 180 160 140 120 100 80 60 40 20 0 trr(ns) VR=200V Tj=125C 0.6 0.5 0.4 IF=IF(av) IF=0.5xIF(av) S factor VR=200V Tj=125C IF=2xIF(av) 0.3 0.2 0.1 dIF/dt(A/s) 0 50 100 150 200 250 300 350 400 450 500 0.0 dIF/dt(A/s) 0 50 100 150 200 250 300 350 400 450 500 3/7 Characteristics STTH20003TV Figure 7. Relative variations of dynamic Figure 8. parameters versus junction temperature (reference: Tj = 125 C) 8 S factor Transient peak forward voltage versus dIF/dt (90% confidence, per diode) 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 25 VFP(V) IF=IF(av) Tj=125C 7 6 5 4 3 2 1 100 125 IRM Tj(C) 50 75 0 dIF/dt(A/s) 0 50 100 150 200 250 300 350 400 450 500 Figure 9. Forward recovery time versus dIF/dt (90% confidence, per diode) 1000 900 800 700 600 500 400 300 200 100 0 tfr(ns) VFR=1.1 x VF max. IF=IF(av) Tj=125C dIF/dt(A/s) 0 50 100 150 200 250 300 350 400 450 500 4/7 STTH20003TV Package information 2 Package information Epoxy meets UL94, V0 Cooling method: by conduction (C) Recommended torque value: 1.3 Nm Maximum torque value: 1.5 Nm ISOTOP Dimensions Dimensions Ref. Millimeters Min. E G2 Table 5. Inches Min. 0.465 0.350 0.307 0.030 0.077 1.488 1.240 0.990 0.939 Max. 0.480 0.358 0.323 0.033 0.081 1.504 1.248 1.004 0.951 Max. 12.20 9.10 8.20 0.85 2.05 38.20 31.70 25.50 24.15 A C 11.80 8.90 7.8 0.75 1.95 37.80 31.50 25.15 23.85 A1 A A1 C2 E2 B C C2 F1 F D D1 E P1 E1 G D1 D S E2 G 24.80 typ. 14.90 12.60 3.50 4.10 4.60 4.00 4.00 30.10 15.10 12.80 4.30 4.30 5.00 4.30 4.40 30.30 0.976 typ. 0.587 0.496 0.138 0.161 0.181 0.157 0.157 1.185 0.594 0.504 0.169 0.169 0.197 0.69 0.173 1.193 B G1 G2 OP G1 E1 F F1 P P1 S In order to meet environmental requirements, ST offers these devices in ECOPACK(R) packages. These packages have a lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com. 5/7 Ordering information STTH20003TV 3 Ordering information Ordering type STTH20003TV Marking STTH20003TV Package ISOTOP Weight Base qty Delivery mode Tube 27 g 10 (without screws) (with screws) 4 Revision history Date 1999 5-Sep-2006 Revision 2C 2 First issue Reformatted to current standards. Thermal resistance updated in Table 2. Description of Changes 6/7 STTH20003TV Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ("ST") reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST's terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST'S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER'S OWN RISK. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. (c) 2006 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 7/7 |
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